About Us

The world's first successful growth of bulk r-GeO₂ crystals using the FZ methodhas been announced.

Completed a Series A funding round totaling approximately ¥719 million. This brings the company's total funding raised since its founding to ¥1.059 billion.

Through collaboration with Nippon Denki Seimitsu Kogyo, we have commenced paid sample shipments of our new product. We have designated Nippon Denki Seimitsu Kogyo's Kobe Plant as the manufacturing base, marking the first step toward mass production.

Successfully achieved n-type conductivity in r-GeO₂ semiconductors through ion implantation.

We have successfully fabricated rutile-type germanium dioxide (r-GeO₂) thin films on silicon substrates.

Researchers announced they have confirmed electrical properties suggesting the possibility of p-type conductivity in r-GeO₂ semiconductors.

The successful synthesis of bulk rutile-type germanium dioxide crystals has been announced.

World's first rutile-type GeO₂ crystal confirmed to operate as a Schottky barrier diode.

World's first rutile-type germanium dioxide thin film demonstrates N-type conductivity.

Quoltec has reached a basic agreement to conduct shipping inspections for the shipment of paid samples of germanium dioxide (GeO₂).

FASTAR 9th Demo Day Audience Award, M.I.C. Winner

Fiscal Year 2024 Go-Tech Program (formerly Support for Innovation) Selected

Kyoto Research Park Tenant

Acquisition of certification under the Ministry of Economy, Trade and Industry's Technology Information Management Certification System (TICS)

【Seed】Funding Secured (Seed Round Total Raised: ¥340 Million)

11th Kyoshin & Regional Entrepreneur Award Excellence Prize Winner

Shiga Prefectural Techno Factory Store Entry

【Seed】 Capital and Business Alliance with Quoltec Corporation and Nippon Denki Seimitsu Kogyo Co., Ltd.

“U-START UP KANSAI Open Pitch” NEDO Award Winner

【Seed】Ritsumeikan Social Impact Fund Secures J-KISS Funding

Establishment of a company