カテゴリー: News (English)

World’s First Growth of Rutile-type GeO₂ Bulk Crystal by FZ method

Patentix Inc. has achieved the world&#821…

Patentix, a startup from Ritsumeikan University, Raises Approximately 719 Million JPY in Series A Funding – Accelerating the Social Implementation of Ultra-Wide Bandgap (UWBG) Semiconductor GeO₂ –

Patentix is pleased to announce that it h…

Successful n-type Doping of r-GeO₂ Semiconductor by Ion Implantation A Major Step Forward in Establishing r-GeO₂ Power Device Manufacturing Technology

Patentix Achieves Breakthrough in Deposition of Rutile-GeO₂ Thin Film on Silicon Substrate ～A step toward the cost-effective production of r-GeO₂ power semiconductors.～

Electrical Properties Suggest Potential for p-Type Conduction in r-GeO₂ Semiconductor ~ Planning to Verify p-Type Conductivity Through Multiple Evaluation Methods ~

Patentix Inc. has obtained results sugges…

Patentix Inc. Succeeds in Synthesizing Bulk Rutile Germanium Dioxide Crystals

Received NEDO Award for “U-START UP KANSAI Open Pitch”

On Thursday, September 14, 2023, Patenti…

World’s first successful deposition of rutile-structured germanium dioxide (r-GeO₂) on SiC by PhantomSVD（Phantom spatial vapor deposition）method.

　　　 Successful crystal growth of r-GeO2 t…

Press Release (Notice of Fund Raising)

Patentix Inc. August 31, 2023 The Patenti…

Our company was selected for FASTAR, an acceleration program by SME Support Japan.

About FASTAR FASTAR is a growth accelerat…