カテゴリー: News (English)

【Exhibition Info:】SEMICON Japan 2025

We are pleased to announce that we will b…

World’s First Growth of Rutile-type GeO₂ Bulk Crystal by FZ method

Patentix Inc. has achieved the world&#821…

Patentix, a startup from Ritsumeikan University, Raises Approximately 719 Million JPY in Series A Funding – Accelerating the Social Implementation of Ultra-Wide Bandgap (UWBG) Semiconductor GeO₂ –

Patentix is pleased to announce that it h…

Successful n-type Doping of r-GeO₂ Semiconductor by Ion Implantation A Major Step Forward in Establishing r-GeO₂ Power Device Manufacturing Technology

Patentix Achieves Breakthrough in Deposition of Rutile-GeO₂ Thin Film on Silicon Substrate ～A step toward the cost-effective production of r-GeO₂ power semiconductors.～

Electrical Properties Suggest Potential for p-Type Conduction in r-GeO₂ Semiconductor ~ Planning to Verify p-Type Conductivity Through Multiple Evaluation Methods ~

Patentix Inc. has obtained results sugges…

Patentix Inc. Succeeds in Synthesizing Bulk Rutile Germanium Dioxide Crystals

Received NEDO Award for “U-START UP KANSAI Open Pitch”

On Thursday, September 14, 2023, Patenti…

World’s first successful deposition of rutile-structured germanium dioxide (r-GeO₂) on SiC by PhantomSVD（Phantom spatial vapor deposition）method.

　　　 Successful crystal growth of r-GeO2 t…

Press Release (Notice of Fund Raising)

Patentix Inc. August 31, 2023 The Patenti…