カテゴリー: News (English)

[Award Announcement] We are proud to announce that we received the “Chairman’s Award” at the NBCI Start-up Award!

The nano tech exhibition was held at Toky…

Patentix Selected for “J-Startup KANSAI 2025” Creating “Height” from Kansai as a Startup Capable of Competing and Winning Globally

Patentix (Headquarters: Kusatsu City, Shi…

【Exhibition Announcement】nano tech 2026

We are pleased to announce that we will b…

Patentix to Make Its Debut at the 40th NEPCON JAPAN~ Aiming for the Practical Application and Popularization of Rutile-Structured Germanium Dioxide (r-GeO₂) as a Next-Generation Power Semiconductor Material ~

Patentix Inc.is pleased to announce its f…

【Exhibition Info:】SEMICON Japan 2025

We are pleased to announce that we will b…

World’s First Growth of Rutile-type GeO₂ Bulk Crystal by FZ method

Patentix Inc. has achieved the world&#821…

Patentix, a startup from Ritsumeikan University, Raises Approximately 719 Million JPY in Series A Funding – Accelerating the Social Implementation of Ultra-Wide Bandgap (UWBG) Semiconductor GeO₂ –

Patentix is pleased to announce that it h…

Successful n-type Doping of r-GeO₂ Semiconductor by Ion Implantation A Major Step Forward in Establishing r-GeO₂ Power Device Manufacturing Technology

Patentix Achieves Breakthrough in Deposition of Rutile-GeO₂ Thin Film on Silicon Substrate ～A step toward the cost-effective production of r-GeO₂ power semiconductors.～

Electrical Properties Suggest Potential for p-Type Conduction in r-GeO₂ Semiconductor ~ Planning to Verify p-Type Conductivity Through Multiple Evaluation Methods ~

Patentix Inc. has obtained results sugges…